Electron cyclotron resonance etching of III–V nitrides in IBr/Ar plasmas

Journal of Vacuum Science and Technology B 15(1), 98 (1997).

The etched surface of GaN was found to be extremely smooth, while the etch rates were slower than with either ICl/Ar or Cl₂/Ar.

This item cites the following items in the database:

1. Highly p-typed Mg-doped GaN films grown with GaN buffer layer
2. High-power InGaN/GaN double-heterostructure violet light emitting diodes
3. High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes
4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
5. Reactive ion etching of gallium nitride in silicon tetrachloride plasmas
6. Reactive ion etching of GaN using BCl₃
7. Reactive Ion Etching of Gallium Nitride Using Hydrogen Bromide Plasmas
8. Reactive ion etching of GaN using CHF₃/Ar and C₂ClF₅/Ar plasmas
9. Dry Etching of Thin Film InN, AiN and GaN
10. Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN
11. Electron cyclotron resonance etching characteristics of GaN in SiCl₄/Ar
12. High temperature electron cyclotron resonance etching of GaN, InN, and AlN
13. Ecr Plasma Etching of GaN, AlN and Inn Using Iodine or Bromine Chemistries
14. ICl/Ar electron cyclotron resonance plasma etching of III-V nitrides
15. Growth of III-V materials by metalorganic molecular-beam epitaxy Growth of III-V materials by MOMBE
16. Ar⁺-ion milling characteristics of III-V nitrides

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Sunday, July 20, 1997 12:27:29 PM

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