Data for reference kim-jvstb-15-921

Surface roughness of nitrided (0001) Al2O3 and AlN epilayers grown on (0001) Al2O3 by reactive molecular beam epitaxy

W Kim, M Yeadon, AE Botchkarev, SN Mohammad, JM Gibson, H Morkoc

Journal of Vacuum Science and Technology B 15(4), 921 (1997).

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This item is cited by the following items in the database:

  1. Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on September 18, 1997 2:37:05 PM

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