Data for reference lee-jvstb-14-3537

Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures

JW Lee, CB Vartuli, CR Abernathy, JD MacKenzie, JR Mileham, SJ Pearton, RJ Shul, JC Zolper, M Hagerott-Crawford, JM Zavada, RG Wilson, RN Schwartz

Journal of Vacuum Science and Technology B 14(6), 3537 (1996).

InxGa1-xN alloys (x up to 0.75) was selective etched using KOH-based wet etch solutions. The etching rate was strongly depended on material quality.

This item cites the following items in the database:

  1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
  2. Deposition of highly resistive, undoped, and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy
  3. Ion-implanted GaN junction field effect transistor
  4. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
  5. AlGaN ultraviolet photoconductors grown on sapphire
  6. Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy
  7. Room-temperature photoenhanced wet etching of GaN
  8. Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar
  9. Characteristics of chemically assisted ion beam etching of gallium nitride
  10. High temperature electron cyclotron resonance etching of GaN, InN, and AlN
  11. Ecr Plasma Etching of GaN, AlN and Inn Using Iodine or Bromine Chemistries

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Sunday, February 9, 1997 2:16:53 PM

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