Data for reference ambacher-jvstb-14-3532

Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition

O Ambacher, MS Brandt, R Dimitrov, T Metzger, M Stutzmann, RA Fischer, A Miehr, A Bergmaier, G Dollinger

Journal of Vacuum Science and Technology B 14(6), 3532 (1996).

The elemental composition dependence on the growth temperature was investigated by elastic recoil detection analysis. The nitrogen flux from the InN, GaN, and AIN surfaces was determined by thermal decomposition experiments and x-ray diffraction.

This item cites the following items in the database:

  1. Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy
  2. Growth of cubic phase gallium nitride by modified molecular-beam epitaxy Growth of cubic phase gallium nitride
  3. Effects of an AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga 1-xAl xN (0 < x ≤ 0.4) films grown on sapphire substrates by MOVPE
  4. Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metalorganic chemical vapor deposition
  5. Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition

This item is cited by the following items in the database:

  1. The role of gaseous species in group-III nitride growth

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Monday, January 13, 1997 3:15:35 PM
Modified by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Sunday, February 9, 1997 1:58:30 PM

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