Data for reference vartuli-jvstb-14-3523

High temperature surface degradation of III–V nitrides

CB Vartuli, SJ Pearton, ES Lambers, CR Abernathy, JD MacKenzie, JC Zolper

Journal of Vacuum Science and Technology B 14(6), 3523 (1996).

The surface stoichiometry, surface morphology, and electrical conductivity of AlN, GaN, InN, InGaN, and InAlN were examined at rapid thermal annealing temperatures up to 1150 °C. AlN may prove to be a good capping material for the other nitrides.

This item cites the following items in the database:

  1. Highly p-typed Mg-doped GaN films grown with GaN buffer layer
  2. High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes
  3. High-power InGaN/GaN double-heterostructure violet light emitting diodes
  4. Ion implantation doping and isolation of GaN
  5. Implant isolation of InxAl1-xN and InxGa1-xN Implant isolation of In[sub x]Al1-xN and InxGa1-xN
  6. Metal contacts to gallium nitride
  7. Low resistance ohmic contacts on wide band-gap GaN
  8. Use of InN for Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors
  9. Growth of high purity AlN crystals
  10. Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN
  11. High pressure solution growth of GaN
  12. The equilibrium pressure of N2 over GaN
  13. Wide-gap Semiconductor (In,Ga)N
  14. Thermal stability of GaN investigated by low-temperature photoluminescence spectroscopy
  15. The preparation and properties of vapor-deposited single-crystal-line GaN
  16. Growth of III-V materials by metalorganic molecular-beam epitaxy Growth of III-V materials by MOMBE

This item is cited by the following items in the database:

  1. Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Monday, January 13, 1997 2:33:26 PM
Modified by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Sunday, February 9, 1997 1:36:10 PM

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