Data for reference vartuli-jvstb-14-3520

Thermal stability of W, WSix , and Ti/Al ohmic contacts to InGaN, InN, and InAlN

CB Vartuli, SJ Pearton, CR Abernathy, JD MacKenzie, RJ Shul, JC Zolper, ML Lovejoy, AG Baca, M Hagerott-Crawford

Journal of Vacuum Science and Technology B 14(6), 3520 (1996).

W contacts gave the lowest resistance to n+ InGaN and InN,and found to be the most stable. The specific contact resistance stability degraded at temperatures 400 °C on InN, >500 °C on InAlN, and >600 °C on InGaN.

This item cites the following items in the database:

  1. Highly p-typed Mg-doped GaN films grown with GaN buffer layer
  2. High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes
  3. Metal contacts to gallium nitride
  4. Metal semiconductor field effect transistor based on single crystal GaN
  5. High-power GaN p-n junction blue-light-emitting diodes
  6. Low resistance ohmic contacts on wide band-gap GaN
  7. Thermal stability of W ohmic contacts to n-type GaN
  8. Use of InN for Ohmic contacts on GaAs/AlGaAs heterojunction bipolar transistors
  9. Growth of III-V materials by metalorganic molecular-beam epitaxy Growth of III-V materials by MOMBE
  10. High temperature electron cyclotron resonance etching of GaN, InN, and AlN

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Monday, January 13, 1997 3:19:56 PM
Modified by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Sunday, February 9, 1997 1:03:44 PM

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