Data for reference durbha-jvstb-14-2582

Microstructural stability of ohmic contacts to InxGa1-xN

A Durbha, SJ Pearton, CR Abernathy, JW Lee, PH Holloway, F Ren

Journal of Vacuum Science and Technology B 14(4), 2582 (1996).

The WSix contacts were found to possess excellent thermal stability and retained good structural properties at annealing temperatures as high as 800 °C on GaN. These contacts on In0.5Ga0.5N had a minimum specific contact resistivity of 1.48x10-5 cm2 and an excellent surface morphology following annealing at 700 °C.

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, January 18, 1997 7:44:04 AM

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