Data for reference tafemer-jvstb-14-2357

Investigation of GaN deposition on Si, Al203, and GaAs using in situ mass spectroscopy of recoiled ions and reflection high-energy electron diffraction

W. T. Tafemer, A. Bensaoula, E. Kim, A. Bousetta

Journal of Vacuum Science and Technology B 14(3), 2357 (1996).

This paper is another example where ECR source is used to generate active nitrogen for GaN growth.

This item is cited by the following items in the database:

  1. Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy
  2. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  3. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by A submitted manuscript, on November 26, 1997 4:37:14 PM

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