Data for reference johnson-jvstb-14-2349

Molecular beam epitaxy growth and properties of GaN, AlxGa1-xN, and AlN on GaN/SiC substrates MBE growth and properties of GaN, AlxGa1-xN, and AlN

M. A. L. Johnson, Shizuo Fujita, W. H. Rowland, K. A. Bowers, W. C. Hughes, Y. W. He, N. A. El-Masry, J. W. Cook, J. F. Schetzina , J. Ren, J. A. Edmond

Journal of Vacuum Science and Technology B 14(3), 2349 (1996).

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This item is cited by the following items in the database:

  1. The role of gaseous species in group-III nitride growth
  2. The Polarity of GaN: a Critical Review
  3. X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena.

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