kim-jvstb-13-796

Data for reference kim-jvstb-13-796

Growth and characterization of GaN on sapphire (0001) using plasma-assisted ionized source beam epitaxy Growth and characterization of GaN on sapphire (0001)

K. Kim, M. C. Yoo, K. H. Shim, J. T. Verdeyen

Journal of Vacuum Science and Technology B 13(2), 796 (1995).

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