Data for reference beresford-jvstb-13-792

Influence of substrate electrical bias on the growth of GaN in plasma-assisted epitaxy Influence of substrate electrical bias

R. Beresford, A. Ohtani, K. S. Stevens, M. Kinniburgh

Journal of Vacuum Science and Technology B 13(2), 792 (1995).

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This item is cited by the following items in the database:

  1. Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy
  2. Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods

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