Data for reference yang-jvstb-13-789Approach to obtain high quality GaN on Si and SiC-on- silicon-on-insulator compliant substrate by
molecular-beam epitaxy Approach to obtain high quality GaN
Z. Yang, F. Guarin, I. W. Tao, W. I. Wang , S. S. Iyer
Journal of Vacuum Science and Technology B 13(2), 789 (1995).
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