Data for reference hughes-jvstb-13-1571

Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates GaN films on GaN/SiC substrates

W. C. Hughes, W. H. Rowland, M. A. L. Johnson, Shizuo Fujita, J. W. Cook, J. F. Schetzina , J. Ren, J. A. Edmond

Journal of Vacuum Science and Technology B 13(4), 1571 (1995).

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This item is cited by the following items in the database:

  1. Free Excitons in GaN
  2. PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
  3. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
  4. The Polarity of GaN: a Critical Review
  5. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)
  6. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces

Contributed by Bo A I Monemar from mac101.ifm.liu.se. on Thursday, May 30, 1996 6:33:11 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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