Data for reference albanesi-jvstb-12-2470

Theoretical study of the band offsets at GaN/AlN interfaces Theoretical study of the band offsets at GaN/AlN interfaces

E. A. Albanesi, W. R. L. Lambrecht, B. Segall

Journal of Vacuum Science and Technology B 12(4), 2470 (1994).

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This item is cited by the following items in the database:

  1. Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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