Data for reference stevens-jvstb-12-1186

Growth of group III nitrides on Si(111) by plasma- assisted molecular beam epitaxy Growth of group III nitrides on Si(111)

K. S. Stevens, A. Ohtani, A. F. Schwartzman, R. Beresford

Journal of Vacuum Science and Technology B 12(2), 1186 (1994).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
  2. Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Monday, May 2, 2005 6:25:22 PM.
© 1998 The Materials Research Society