GaN, AlN, and InN: A review

Journal of Vacuum Science and Technology B 10(4), 1237 (1992).

An archival review of the status of nitride semiconductor research through 1991. Special effort is made to include all of the contributions to the field in an encyclopedic manner to permit future researchers to collect this information from a single convenient source.

This item cites the following items in the database:

1. Basal orientation aluminum nitride grown at low temperature by rf diode sputtering
2. The dependence of aluminum nitride film crystallography on sputtering plasma composition
3. High efficiency blue LED utilizing GaN film with AlN buffer layer grown by MOVPE
4. Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
5. Effects of an AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga _1-xAl _xN (0 < x ≤ 0.4) films grown on sapphire substrates by MOVPE
6. Infrared lattice vibration of vapour-grown AlN
7. Interfacial superstructure of AlN/n-GaAs(001) system fabricated by metalorganic chemical vapor deposition
8. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
9. Electron beam effects on blue luminescence of zinc-doped GaN
10. Stimulated emission near ultraviolet at room temperature from a GaN film grown on sapphire by MOVPE using an AlN buffer layer
11. Stimulated emission in MOVPE-grown GaN film
12. Heteroepitaxial growth and the effects of strain on the luminescent properties of GaN films on (11&twobar;0) and (0001) sapphire substrates
13. Zn related electroluminescence properties in MOVPE grown GaN
14. p-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation
15. uv and blue electroluminescence from Al/GaN:Mg/GaN LED treated with low-energy electron beam irradiation (LEEBI)
16. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
17. Growth of GaN thin-films from triethylgallium monamine
18. Formation of aluminum nitride films on GaAs(110) at room temperature by reactive molecular-beam epitaxy: x-ray and soft x-ray photoemission spectroscopy
19. Mass spectrometric studies of vapor-phase crystal growth
20. Vapour-phase epitaxial growth of Ga_1-xAl_xN on sapphire
21. Growth and properties of Al _xGa _1-xN epitaxial layers
22. Epitaxial growth and electrical properties of GaN-AlN solid solutions
23. Infrared lattice vibrations and free-electron dispersion in GaN
24. Optical properties of aluminum nitride prepared by chemical and plasmachemical vapour deposition
25. Adsorption of atomic nitrogen at GaAs(110) surfaces
26. Time-resolved spectroscopy of Zn- and Cd-doped GaN
27. Band structures of GaN and AlN
28. Band structure and reflectivity of GaN
29. The chemical preparation of gallium nitride layers at low temperatures
30. Recombination mechanisms in GaN:Zn
31. Cathodoluminescence study of Zn doped GaN
32. The band structure of GaN
33. Raman spectra of AlN, cubic BN and BP
34. Growth and physical properties of rf-magnetron sputtered InN semiconducting films
35. Raman scattering in thin film waveguides
36. The deposition of group III nitrides on silicon substrates
37. The growth, crystallographic and electrical assessment of epitaxial layers of aluminum nitride on corundum substrates
38. Pressure and temperature dependence of the absorption edge in GaN
39. Stimulated emission of GaN under high one and two quantum excitations
40. Thermodynamic analysis of methods of preparation of GaN
41. X-ray phase analysis and the elastic properties of gallium nitride
42. Electronic structure of AlN
43. Gallium nitride films
44. Epitaxial growth of aluminum nitride
45. Aluminum nitride films by chemical transport
46. Crystal growth and characterization of gallium nitride
47. The preparation and properties of aluminum nitride films
48. Electron-hole plasma generation in gallium nitride
49. First order Raman scattering in GaN
50. Microhardness of single crystals of BeO and other wurtzite compounds
51. Lattice vibration spectra of aluminum nitride
52. On the preparation, optical properties, and electrical behavior of aluminum nitride
53. Properties of GaN grown on sapphire substrates
54. Variation of photoluminescence with carrier concentration in GaN
55. Photoluminescence of GaN epitaxial layers
56. Photoluminescence and gain spectroscopy of highly excited epitaxial GaN-layers
57. Hot electron microwave conductivity of wide band gap semiconductors
58. Strength of aluminum nitride whiskers
59. III-V Nitrides for Electronic and Optoelectronic Applications
60. Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
61. Method of growing p-type GaN in nonequilibrium conditions
62. Steady-state thermal conductivity measurements of AlN and SiC substrate materials
63. Donor-acceptor pair recombination in GaN
64. Absorption, reflectance and luminescence of GaN single crystals
65. Absorption, reflectance, and luminescence of GaN epitaxial layers
66. Stimulated emission and laser action in gallium nitride
67. Factors affecting the growth of aluminum nitride layers on sapphire by the reaction of nitrogen with aluminum monoselenide
68. Radiofrequency reactive sputtering for deposition of aluminum nitride thin films
69. Epitaxial growth and piezoelectric properties of AlN, GaN, and GaAs on sapphire or spinel
70. Hot filament enhanced chemical vapor deposition of AlN thin films
71. Space charge conduction and electrical behavior of aluminum nitride single crystals
72. Refractive index of GaN
73. Growth and morphology of GaN
74. Photoconductivity of Zn-doped GaN
75. Optical investigations of Zn, Hg, and Li doped GaN
76. Crystal growth of GaN by the reaction between gallium and ammonia
77. Synthesis of gallium nitride in a stream of active nitrogen
78. Gallium nitride formed by vapour deposition and by conversion from gallium arsenide
79. Analysis of indium nitride surface oxidation
80. Morphology and structure of indium nitride films
81. Pseudopotential band structure of indium nitride
82. Investigation of the energy structure of Al₂O₃ and AlN by ultra-soft x-ray spectroscopy
83. Optimized growth conditions of GaN epitaxial layers
84. Thermal stability of the AlN/a-Si/GaAs MIS diodes with different GaAs surface stochiometry
85. Effects of In- surface treatment on the electrical properties and structures of AlN/n-In- interface
86. Electrical properties and structures of the MOCVD-AlN/GaAs interface
87. Structure control of GaN films grown on (001) GaAs substrates by GaAs surface pretreatments
88. Growth characterization of low-temperature MOCVD GaN--Comparison between N₂H₄ and NH₃
89. Improvement of the electrical properties of the AlN/GaAs MIS system and their thermal stability by GaAs surface stochiometry control
90. Control of the electrical properties of AlN/thin-a-Si/GaAs MIS diodes by GaAs surface pretreatments
91. Surface passivation of GaAs by aluminum nitride films
92. Nonlinear optical susceptibilities of AlN film
93. Study on the influence of annealing effects in GaN VPE
94. X-ray-diffraction determination of valence electron density in aluminum nitride
95. Growth of GaN films using trimethylgallium and hydrazine
96. Electronic structure of an AlN film produced by ion implantation, studied by electron spectroscopy
97. High pressure vapor phase epitaxy of GaN
98. Band structure and high-pressure phase transition in GaN
99. The composition of the vapour over gallium nitride
100. Low temperature growth of gallium nitride
101. Low-temperature luminescence of GaN
102. On the thermal decomposition of GaN in vacuum
103. Growth and properties of Ga _xAl _1-xN compounds
104. Electrical properties of sputtered AlN films and interface analyses by Auger electron spectroscopy
105. Reactive sputtering of gallium nitride thin films for GaAs MIS structures
106. Quantitative ion beam process for the deposition of compound thin films
107. Effects of hydrogen in an ambient on the crystal growth of GaN using Ga(CH₃)₃ and NH₃
108. Raman scattering in Al _xGa _1-xN alloys
109. Gallium nitride studied by electron spectroscopy
110. Energy band structure of AlN
111. Energy band structure of AlN
112. Cathodoluminescence of MOVPE-grown GaN layer on α-Al₂O₃
113. MOVPE growth of GaN on a misoriented sapphire substrate
114. MOCVD of wide bandgap III-V semiconductors using novel precursors
115. A new type of twin in an AlN crystal
116. Electrical and optical properties of rf-sputtered GaN and InN
117. Microstructural and optical characterization of GaN films grown by PECVD on (0001) sapphire substrates
118. New emission line in highly excited GaN
119. Heteroepitaxial growth of GaN _1-xP _x (x≤0.06) on sapphire substrates
120. Epitaxial growth of GaN _1-xP _x (x ≤ 0.04) on sapphire substrates
121. Vapor epitaxy of gallium nitride
122. Luminescence of Be- and Mg-doped GaN
123. Luminescence of Zn- and Cd-doped GaN
124. Electrical properties of n-type vapor-grown gallium nitride
125. Some properties of chemically vapor deposited films of Al _xO _yN _z on silicon
126. Preparation of single phase gallium nitride from single crystal gallium arsenide
127. Cathodoluminescence properties of undoped and Zn-doped Al_xGa_1-xN grown by metalorganic vapor phase epitaxy
128. Preparation of Al _xGa _1-xN/GaN heterostructures by MOVPE
129. Metalorganic vapor phase epitaxial growth and properties of GaN/Al _0.1Ga_0.9N layered structures
130. Efficient injection mechanism for electroluminescence in GaN
131. GaN electroluminescent devices: preparation and studies
132. Effect of the growth parameters on the properties of GaN:Zn epilayers
133. Gallium nitride emitting devices preparation and properties
134. Optimized growth conditions and properties of n-type and insulating GaN
135. Crystal structure of aluminum nitride
136. Electronic structures and doping of InN, In_xGa_1-xN, and In_xAl_1-xN
137. Band structure of InN
138. Nitrogen compounds of gallium III. gallic nitride
139. The electronic band structures of the wide band gap semiconductors GaN and AlN
140. Über die Kristallstrukturen von Cu₃N, GaN und InN
141. Electron states of manganese luminescence centres in AlN
142. Luminescent properties of AlN activated by europium
143. Phonon structure of Mn⁴⁺ activator centers in AlN
144. The luminescence properties of AlN with manganese and rare earth activators under ultraviolet and cathode-ray excitation
145. Fine structure of emission spectra of the red AlN:Mn luminescence
146. Equilibrium pressure of N₂ over GaN and high pressure solution growth of GaN
147. High pressure vapor growth of GaN
148. Electronic structure of Cu overlayers on AlN
149. GaN blue light emitting diodes prepared by metalorganic chemical vapor deposition
150. Electrical and optical properties of AlN--a thermostable semiconductor
151. Gallium nitride: band structure, properties, and potential applications (review)
152. Reflective filters based on single-crystal GaN/Al_xGa_1-xN multilayers deposited using low-pressure metalorganic chemical vapor deposition
153. Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition
154. Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low- pressure metalorganic chemical vapor deposition
155. Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition
156. Properties and ion implantation of Al(x)Ga(1-x)N epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition
157. Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells
158. Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition
159. High electron mobility GaN/Al_xGa_1-xN heterostructures grown by low-pressure metalorganic chemical vapor deposition
160. Edge emission of Al _xGa _1-xN
161. Behaviour of Zn as dopant in the photoluminescence of Al _xGa _1-xN
162. Effect of Si on the photoluminescence of GaN
163. Characterization of aluminum nitride layers formed directly by 700-800 keV ¹⁵N⁺₂ implantation into aluminum
164. Proprietes physiques et mecaniques de ceramiques AlN-Al₂O₃ obtenues par compression a chaud
165. Overgrowth of indium nitride thin films on aluminum nitride nucleated (00.1) sapphire by reactive magnetron sputtering
166. Characterization of rf-sputtered InN films and AlN/InN bilayers on (0001) sapphire by the x-ray precession method
167. Substrate and temperature dependent morphology of rf-sputtered indium nitride films
168. 1.0 GHz thin-film acoustic wave resonator on GaAs
169. Plasma deposition of Ga- and GaN
170. Deep energy levels of defects in the wurtzite semiconductors AlN, CdS, CdSe, ZnS, and ZnO
171. Semiempirical tight binding band structures of wurtzite semiconductors: AlN, CdS, CdSe, ZnS, and ZnO
172. Energy band-gap bowing parameter in an Al_xGa_{1- x} N alloy
173. Epitaxial growth and properties of Al _xGa _1-xN by MOVPE
174. Effect of AlN buffer layer on AlGaN/α-Al₂O₃ heteroepitaxial growth by metalorganic vapor phase epitaxy
175. Preparation and structural properties of GaN thin films
176. Optical absorption and vacuum-ultraviolet reflectance of GaN thin films
177. Auger electron and x-ray photoelectron spectroscopy of sputter deposited aluminum nitride
178. Preparation and properties of III-V nitride thin films
179. Gallium nitride growth on sapphire
180. Luminescence in epitaxial GaN:Cd
181. Variation of lattice parameters in GaN with stochiometry and doping
182. Dielectric properties of reactively sputtered gallium nitride films
183. The growth of highly resistive gallium nitride films
184. Electronic structure and bonding at SiC/AlN and SiC/B- interfaces
185. Nitrides-structures and crystal growth
186. Growth of GaN thin films from active nitrogen and GaCl
187. Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
188. Resonant Raman scattering of TO(A₁), TO(E₁) and E₂ optical phonons in GaN
189. Formation of Al-nitride films at room temperature by nitrogen ion implantation into aluminum
190. Channeling studies of As-grown GaN
191. Monte Carlo calculation of the velocity-field relationship for gallium nitride
192. Growth morphology and surface-acoustic-wave measurements of AlN films on sapphire
193. Characterization of GaN epitaxial layers using cathodoluminescence
194. Growth kinetics and catalytic effects in the vapor phase epitaxy of gallium nitride
195. Heteroepitaxial thermal gradient solution growth of GaN
196. Thermal stability of complex nitrides of elements of subgroup IIIB
197. Thermal stability of indium nitride at elevated temperatures and nitrogen pressures
198. High pressure solution growth of GaN
199. Growth anisotropy in the GaN/Al₂O₃ system
200. An AES investigation of aluminum, Al oxide and Al nitride thin films
201. Preparation of GaN films by cathode sputtering
202. The use of metalorganics in the preparation of semiconductor materials. IV. The nitrides of aluminum and gallium
203. Optical studies of the phonons and electrons in gallium nitride
204. X-ray analysis of gallium nitride
205. Preparation of InN epitaxial layers in InCl₃-NH₃ system
206. Cathodoluminescence of undoped and Zn-doped GaN epitaxial layers
207. Electrical properties of GaAs/GaN/GaAs semiconductor- insulator-semiconductor structures
208. Secondary electron emission from the GaN:Cs-O surface
209. Microstructural observations on gallium nitride light emitting diodes
210. Preparation of Mg-doped GaN diodes exhibiting violet electroluminescence
211. Mechanism of light production in MIS GaN:Mg violet light-emitting diodes
212. Violet luminescence of Mg-doped GaN
213. The preparation and properties of vapor-deposited single-crystal-line GaN
214. MOCVD epitaxial growth of single crystal GaN, AlN and Al _xGa _1-xN
215. Film growth of GaN on a c-axis oriented ZnO film using reactive ionized-cluster beam technique and its application to thin film devices
216. Temperature dependence of photoluminescence from GaN
217. Pair luminescence from Zn-doped GaN
218. A comparative study of the deposition conditions in the plasma-assisted deposition of gallium nitride thin films
219. Cathodoluminescence from gallium nitride implanted with arsenic and phosphorus
220. Optical properties of AlN single crystals in the energy region 3 to 40 eV
221. First-principles total-energy calculation of gallium nitride
222. Preparation and electrical properties of Al-AlN-Si structures
223. Low temperature growth of GaN and AlN on GaAs using metalorganics and hydrazine
224. Transient capacitance characterization of near-midgap donor-like interface states in AlN/GaAs MIS diodes
225. Characterization of donorlike interface states which play a dominant role in the surface potential pinning in AlN/GaAs interfaces
226. Fundamental energy gap of GaN from photoluminescence excitation spectra
227. Properties of Zn-doped VPE-grown GaN. II. Optical cross sections
228. Properties of VPE-grown GaN doped with Al and some iron-group metals
229. Properties of Zn-doped VPE-grown GaN. I. Luminescence data in relation to doping conditions
230. Electron microscopy of InN films
231. Few characteristics of epitaxial GaN--etching and thermal decomposition
232. Vapor phase epitaxial growth of GaN on GaAs, GaP, Si, and sapphire substrates from GaBr₃ and NH₃
233. Anomalous behaviour in GaN-Zn junctions
234. Epitaxial growth of aluminum nitride on sapphire using metalorganic chemical vapor deposition
235. Crystal structure and band gap of AlGaAsN
236. Activation energy for the sublimation of gallium nitride
237. Properties of Ga _1-xIn _xN films prepared by MOVPE
238. In situ monitoring of GaN growth using interference effects
239. GaN Growth Using GaN Buffer Layer
240. High-power GaN p-n junction blue-light-emitting diodes
241. Highly p-typed Mg-doped GaN films grown with GaN buffer layer
242. Novel metalorganic chemical vapor deposition system for GaN growth
243. Growth of single crystal GaN substrate using hydride vapor phase epitaxy
244. Mechanisms of reactive sputtering of indium 1: growth of InN in mixed Ar-N₂ discharges
245. Influence of growth temperature and substrate material on the properties of epitaxial GaN
246. Preparation of epitaxial gallium nitride II
247. Structural, optical, and dielectric properties of reactively sputtered films in the system AlN-BN
248. Dielectric properties of reactively sputtered films of aluminum nitride
249. Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphire
250. Photoluminescence in P-doped GaN
251. Mechanism of yellow luminescence in GaN
252. missing
253. Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy
254. Photoelectron and electron energy loss spectra of epitaxial aluminum nitride
255. Excitonic effects in the fundamental absorption edge region of AlN
256. Preparation and optical properties of Ga _1-xIn _xN thin films
257. Fundamental absorption edge in GaN, InN and their alloys
258. Das Gitter des Aluminumnitrids (AlN)
259. Growth of cubic phase gallium nitride by modified molecular-beam epitaxy Growth of cubic phase gallium nitride
260. missing
261. Luminescence in GaN
262. Blue-green numeric display using electroluminescent GaN
263. Blue anti-stokes electroluminescence in GaN
264. Low-voltage blue electroluminescence in GaN
265. Properties of gallium nitride
266. Perspective on gallium nitride
267. Frequency response of GaN light-emitting diodes
268. Properties of Zn-doped GaN. II. Photoconductivity
269. Passivation of GaAs surfaces
270. Luminescent properties of GaN
271. Properties of Zn-doped GaN. I. Photoluminescence
272. Optical properties of GaN
273. Luminescence of Be-doped and Li-doped GaN
274. Photoluminescence of Zn-implanted GaN
275. Photoluminescence of ion-implanted GaN
276. Model for electroluminescence in GaN
277. Scanning electron microscopy studies of GaN
278. Optical absorption of GaN
279. GaN electroluminescent diodes
280. GaN bluelight-emitting diodes
281. GaN yellow light-emitting diodes
282. Electroluminescence in GaN
283. Luminescence from GaN MIS diodes
284. Photoemission from GaN
285. Infrared absorption of AlN in the one-phonon region and finite size effects
286. Infrared absorption of AlN single crystals in the two-phonon region
287. Epitaktisches Aufwachsen von AlN-Schichten auf SiC- und Si-Einkristallen in der Gasentladung
288. Refraction index measurements on AlN single crystals
289. Optical absorption edge of AlN single crystals
290. Herstellung dünner Schichten von Aluminum-, Gallium-, sowie Indiumnitrid unter einer Gasentladung
291. The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process
292. Preparation of gallium nitride
293. Cathodoluminescence of gallium nitride single crystals
294. The structural and piezoelectric properties of epitaxial AlN on Al₂O₃
295. Growth of high-resistivity wurtzite and zincblende structure single crystal GaN by reactive-ion molecular beam epitaxy
296. Synthesis of III-V semiconductor nitrides by reactive cathodic sputtering
297. Infrared cathodoluminescence of AlN
298. The dispersion of the refractive index and the birefringence of AlN
299. Ultraviolet electroluminescence in AlN
300. An AlN switchable memory resistor capable of a 20-MHz cycling rate and 500-picosecond switching time
301. Dependence on volume of the phonon frequencies and the ir effective charges of several III-V semiconductors
302. Epitaxial growth of undoped and Mg-doped GaN
303. Substrate-polarity dependence of metal-organic vapor- phase epitaxy-grown GaN on SiC
304. Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxy
305. Growth of InN on GaAs substrates by the reactive evaporation method
306. Vaporization catalysis. The decomposition of gallium nitride
307. Crystal structure refinement of AlN and GaN
308. Variation of lattice parameters with growth conditions in GaN
309. Study on the growth rate in VPE of GaN
310. On the origin of free carriers in high-conducting n-GaN
311. Cubic phase gallium nitride by chemical vapor deposition
312. Disk hydrogen plasma assisted chemical vapor deposition of aluminum nitride
313. Production of nitrides by active nitrogen. I. GaN
314. Kinetics of the epitaxial growth of GaN using Ga, HCl and NH₃
315. Etching of GaN using phosphoric acid
316. Light emitting patterns of gallium nitride electroluminescence
317. Optical properties of GaN light-emitting diodes
318. Electric properties of GaN light-emitting diodes
319. X-ray diffraction topography and crystal characterization of GaN epitaxial layers for light emitting diodes
320. rf-sputtered aluminum nitride films on sapphire
321. Thermal conductivity of GaN: 25-360K
322. Photoconductivity of gallium nitride
323. Growth of Al and Al nitride films in N₂-Ne and N₂-(Ne+Ar) discharges: construction of a ternary phase diagram
324. Structural defects in GaN epilayers grown by gas source molecular beam epitaxy
325. Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy Growth of AlN/GaN layered structures
326. Nonmetallic crystals with high thermal conductivity
327. Thermal expansion of some diamondlike crystals
328. Growth of high purity AlN crystals
329. Reflection spectra of indium nitride
330. Preparation of AlN-Al₂O₃ composite films by microwave plasma chemical vapor deposition
331. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Properties of cubic GaN grown on GaAs
332. Photoluminescence of epitaxial films of gallium nitride
333. Optical properties and microstructure of reactively sputtered indium nitride thin films
334. Electron mobility in indium nitride
335. Optical band gap of indium nitride
336. Infrared absorption in indium nitride
337. Mechanical characteristics of filimentary crystals of aluminum nitride
338. Reaction of N⁺₂ beams with aluminum surfaces
339. Zur Epitaxie von Galliumnitrid auf nichtstöchiometrischem Spinell im System GaCl/NH₃/He
340. The equilibrium pressure of N₂ over GaN
341. Über phosphorescenzfähiges, durch Silicium aktiviertes Aluminumnitrid
342. Some properties of InN films prepared by reactive evaporation
343. Nitride layers on GaAs(110) surfaces
344. Pseudofunction theory of the electronic structure of InN
345. Zero-temperature-coefficient SAW devices on AlN epitaxial films
346. High-frequency and low-dispersion characteristics of surface acoustic waves on AlN/Al₂O₃
347. Optical properties of indium nitride films
348. Electroreflectance of InN semimetallic thin films
349. Gallium nitride diodes emitting dark blue to violet light
350. Space-charge limited current flow in gallium nitride thin films
351. Epitaxial growth of indium nitride
352. Heteroepitaxial growth of InN by microwave-excited metalorganic chemical vapor phase epitaxy
353. EH Recombination and stimulated emission in GaN
354. Vacuum deposition of AlN acoustic transducers
355. The effects of oxygen contamination on the properties of reactively sputtered indium nitride films
356. Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates
357. Aluminum nitride thin films and their properties
358. Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region
359. Epitaxially grown AlN and its optical band gap
360. Reactive molecular beam epitaxy of aluminum nitride
361. Properties of Al/x/Ga/1-x/N films prepared by reactive molecular beam epitaxy
362. Epitaxial growth of GaN/AlN heterostructures
363. Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AIN-coated sapphire substrates
364. Epitaxial growth of aluminum nitride films on sapphire by reactive evaporation
365. Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy
366. The growth of c-axis oriented GaN films by d.c.-biased reactive growth sputtering
367. Low temperature growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy
368. Growth of GaN single crystal films using electron cyclotron resonance plasma excited metalorganic vapor phase epitaxy
369. Synthesis and growth of single crystals of gallium nitride
370. Influence of temperature on the luminescence bands of gallium nitride
371. On the preparation of the nitrides of aluminum and gallium
372. Growth and doping kinetics, cathode luminescence, and electrical properties of heteroepitaxial layers of gallium nitride

This item is cited by the following items in the database:

1. Growth of zinc blende-GaN on beta -SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source
2. ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
   
3. Dry patterning of InGaN and InAlN
4. Nitridation process of sapphire substrate surface and its effect on the growth of GaN
5. Gallium Incorporation Kinetics During GSMBE of GaN
6. Free Excitons in GaN
7. Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
8. Growth Rate Reduction of GaN Due to Ga Surface Accumulation
9. Growth and Doping of AlGaN Alloys by ECR-assisted MBE
10. BANDGAP VARIATION AT THE ISOSTRUCTURAL PHASE TRANSFORMATION OF WURTZITE InN
11. Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
12. Optical Properties of Nitride-based Structures Grown on 6H-SiC
13. Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE.
14. Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
15. Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N₂ overpressure
16. Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals
17. GaN films prepared by ECR plasma-assisted deposition
18. GaN patterned film synthesis: Carbon depletion by hydrogen atoms produced from NH₃activated by electron impact GaN patterned film synthesis
19. Degenerate Layer at GaN/sapphire interface: Influence on Hall-effect measurements
20. Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
21. Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
22. Luminescent properties of gallium nitride layers grown by vapor-phase epitaxy in a chloride system on silicon carbide substrates
23. Properties of InGaN deposited on Glass at Low Temperature
24. New Precursor Routes to Nanocrystalline Cubic/Hexagonal Gallium Nitride, GaN
25. Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
26. Gallium Incorporation Kinetics During GSMBE of GaN
27. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
28. Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-xN quantum-well lasers
29. Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio
30. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
31. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
32. Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
33. Pinholes, Dislocations and Strain Relaxation in InGaN
34. Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers
35. Electrical Profiles in GaN/Al₂O₃ Layers with Conductive Interface Regions
36. Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications
37. Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru
Modified by S. Strite from internet-gateway-x.zurich.ibm.com. on Sunday, January 26, 1997 3:23:52 PM
Modified by ya chenda from 139.18.1.5 on Thursday, June 2, 2005 8:33:41 AM

last updated Wednesday, June 29, 2005 12:22:39 PM.
© 1998 The Materials Research Society