Data for reference strite-jvstb-9-1924

An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Properties of cubic GaN grown on GaAs

S. Strite , J. Ruan , Z. Li , A. Salvador , H. Chen , David J. Smith , W. J. Choyke , H. Morkoc

Journal of Vacuum Science and Technology B 9(4), 1924 (1991).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Growth of zinc blende-GaN on beta -SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source
  3. Epitaxial growth of cubic GaN and AlN on Si(001)
  4. Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD

Contributed by S. Strite
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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