Data for reference sitar-jvstb-8-316

Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy Growth of AlN/GaN layered structures

Z. Sitar, M. J. Paisley, B. Yan, J. Ruan, W. J. Choyke, R. F. Davis

Journal of Vacuum Science and Technology B 8(2), 316 (1990).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review

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