Data for reference kim-jvsta-17-2214

Characteristics of Inductively Coupled Cl2/BCl3 Plasmas during GaN Etching

H. S. Kim, J. W. Lee, T. I. Kim, G.Y. Yeom

Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films 17, 2214 (1999).

In this study, neutrals and positive ions produced by inductively coupled Cl2/BCl3 plasmas were investigated as a function of pressure and Cl2/BCl3 mixture using the QMS and their relation to GaN etch rate were estimated. GaN etch rates increased with the increase of pressure and showed a maximum near 25mTorr for the pure Cl2 and near 30mTorr for Cl2/BCl3. The addition of BCl3 to Cl2 also was increased GaN etch rates until 50%BCl3 was mixed to Cl2. The GaN etch rate with Cl2/BCl3 showed a maximum at Cl2/10%BCl3. For pure Cl2 inductively coupled plasmas, Cl2+ was the main positive ion species and Cl was the main neutral species. For Cl2/BCl3 plasmas, Cl was also main neutral species and Cl2+ was the main positive ion species until 50% BCl3 was mixed to Cl2. BCl2+ ions were the second main species for Cl2/BCl3 plasmas until 50% BCl3 is mixed to Cl2 and became the main species with the further increase of BCl3 percent. The increase of pressure increased the densities of neutral species monotonically for both pure Cl2 and Cl2/BCl3 gas mixtures while Cl2+ slightly decreased until 20mTorr for pure Cl2, and while Cl2+ and BCl2+ increased until 30mTorr for Cl2/BCl3. The GaN etching with pure Cl2 appears to be related to the combination of Cl2+ ion bombardment and the chemical reaction of Cl radicals. In the case of the GaN etching with Cl2/BCl3, in addition to the combined effect of Cl2+ ions and Cl radicals, BCl2+ ions appear to be responsible for some of GaN etching even though they do not have significant effect on the GaN etching compared to Cl2+ and Cl. Ga+, GaCl+, GaCl2+, and N2+ were observed as the positive ions of etch products, and the intensities of these products showed the same trends as those of GaN etch rate. Among the etch products, Ga and N2 appear to be the main etch products. No NCl3 was observed and only a trace of N was detected.

This item cites the following items in the database:

  1. The facet formation of GaN-based device using chemically assisted ion beam etching(CAIBE) with photoresist mask
  2. Etch Characteristics of GaN Using Inductively-Coupled Cl2/HBr and Cl2/Ar Plasmas
  3. EFFECTS OF INDUCTIVELY COUPLED PLASMA CONDITIONS ON THE ETCH PROPERTIES OF GaN AND OHMIC CONTACT FORMATIONS

This item is cited by the following items in the database:

  1. EFFECTS OF PLASMA CONDITIONS ON THE ETCH PROPERTIES OF AlGaN
  2. Etch Characteristics of GaN Using Inductively-Coupled Cl2/HBr and Cl2/Ar Plasmas
  3. EFFECTS OF INDUCTIVELY COUPLED PLASMA CONDITIONS ON THE ETCH PROPERTIES OF GaN AND OHMIC CONTACT FORMATIONS

Contributed by Hyeon-Soo Kim from webinterceptor13c1.cache.pol.co.uk. on Tuesday, February 15, 2000 6:24:18 AM
Modified by Hyeon-Soo Kim from webcache15x.cache.pol.co.uk. on Thursday, March 23, 2000 6:27:25 AM

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