Data for reference ramachandran-jvsta-17-1289

Temperature dependence of molecular beam epitaxy of GaN on SiC (0001)

V Ramachandran, AR Smith, RM Feenstra

Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films 17(4), 1289 (1999).

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This item is cited by the following items in the database:

  1. Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory
  2. Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)

Contributed by R. M. Feenstra from 128.2.24.220 on Monday, June 4, 2001 9:19:43 AM

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