lee-jvsta-17-1230

Data for reference lee-jvsta-17-1230

The facet formation of GaN-based device using chemically assisted ion beam etching(CAIBE) with photoresist mask

Weon-jung Lee, Hyeon-Soo Kim, Geun-Young Yeom, Jae-Won Lee, Tae-Il Kim

Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films 17, 1230 (1999).

In this study, a GaN laser diode structure having a conventional photoresist as the etch mask was etched using Cl2 CAIBE, and their etch properties were investigated as a function of tilt angle. The n-GaN etch rate increased with the tilt angle and showed a maximum at 30 degree of tilt angle similar to the effect of physical sputter yield of sputter etching on tilt angle. Other materials such as p-GaN, AlGaN, and InGaN used for the GaN laser diode also showed similar etch rates as the n-GaN. The etch profile of the etched GaN laser diode structure changed from a positively sloped profile to a negatively profile, and a vertical etch profile was obtained at 50 degree of tilt angle. Also, a sidewall trenching was observed when the tilt angle was lower than 20 degree due to the ion scattering at the sidewall and etch tailing was observed when the tilt angle was higher than 30 degree due to the shadowing by the etch mask and the etched structure. The sidewall roughness was observed when the tilt angle was higher than 30 degree. Different sidewall roughness was observed when the different materials used for the GaN laser diode were etched separately. The increase of Cl2 flow rate decreased the sidewall roughness of the GaN laser diode. A vertical GaN laser diode with a smooth sidewall could be fabricated by the optimization ion beam voltage/current and Cl2 flow rate. Ohmic contacts fabricated on the n-GaN etched at various tilt angles and ion beam voltages showed similar resistances as those fabricated on the unetched n-GaN, therefore, no significant increase in the ohmic contact resistance was observed by the etching GaN using Cl2 CAIBE.

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