Data for reference sinharoy-jvsta-14-896

Molecular beam epitaxy growth and characterization of GaN and AlxGa1-xN on 6H-SiC MBE growth and characterization

S. Sinharoy, G. Augustine, L. B. Rowland, A. K. Agarwal, R. L. Messham, M. C. Driver, R. H.Hopkins

Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films 14(3), 896 (1996).

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This item is cited by the following items in the database:

  1. Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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