Data for reference ding-jvsta-14-819

Electronic structure of cubic gallium nitride films grown on GaAs Electronic structure of c-GaN films

S. A. Ding, G. Neuhold, J. H. Weaver, P. Haberle, K. Horn , O. Brandt, H. Yang, K. Ploog

Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films 14(3), 819 (1996).

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This item is cited by the following items in the database:

  1. Core-Level Photoemission From Stoichiometric GaN(0001)-1×1

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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