Data for reference hwang-jvsta-13-672

Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor deposition Effect of substrate pretreatment on growth of GaN

C.-Y. Hwang, M. J. Schurman, W. E. Mayo , Y. Li, Y. Lu , H. Liu, T. Salagaj, R. A. Stall

Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films 13(3), 672 (1995).

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This item is cited by the following items in the database:

  1. Review of polarity determination and control of GaN

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