Data for reference wen-jvsta-13-2399

Thermal Annealing of the Epitaxial Al/Si(111)7x7 Interface- Al Clustering, Interfacial Reaction, and Al Induced P+ Doping

H. J. Wen, M. Dahneprietsch, A. Bauer, et al

Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films 13(5), 2399 (1995).

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This item is cited by the following items in the database:

  1. Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface

Contributed by A submitted manuscript, on Friday, July 31, 1998 12:44:45 AM

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