Data for reference lee-jvsta-13-2293

Molecular beam epitaxy of GaN(0001) utilizing NH3 and/or NH+x ions: Growth kinetics and defect structure MBE of GaN(0001) utilizing NH3 and/or NH+x ions

N.-E. Lee, R. C. Powell, Y.-W. Kim, J. E. Greene

Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films 13(5), 2293 (1995).

Growth kinetics and defect structure of GaN grown by GSMBE (NH3) and reactive-ion MBE (NHx+) were examined for varying growth conditions.

This item cites the following items in the database:

  1. The preparation and properties of vapor-deposited single-crystal-line GaN

This item is cited by the following items in the database:

  1. Growth Rate Reduction of GaN Due to Ga Surface Accumulation
  2. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  3. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by Devin E. Crawford from mac35.ee.umn.edu. on Tuesday, May 28, 1996 6:49:30 PM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Tuesday, May 3, 2005 4:59:48 PM.
© 1998 The Materials Research Society