Data for reference hubner-jvsta-13-1831

GaN patterned film synthesis: Carbon depletion by hydrogen atoms produced from NH3activated by electron impact GaN patterned film synthesis

A. Hubner, S. R. Lucas, W. D. Partlow , W. J. Choyke , J. A. Schaefer, J. T. Yates, Jr.

Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films 13(4), 1831 (1995).

 

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This item cites the following items in the database:

  1. Perspective on gallium nitride
  2. GaN, AlN, and InN: A review
  3. p-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg
  4. Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

This item is cited by the following items in the database:

  1. Silicon effect on GaN surface morphology

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Modified by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Saturday, June 14, 1997 9:50:40 AM

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