Data for reference pearton-jvsta-11-1772

Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy Dry and wet etching characteristics of InN, AlN, and GaN

S. J. Pearton, C. R. Abernathy, F. Ren, J. R. Lothian, P. W. Wisk, A. Katz

Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films 11(4), 1772 (1993).

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This item is cited by the following items in the database:

  1. Dry patterning of InGaN and InAlN
  2. ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures
  3. Fabrication of GaN mesa structures

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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