Data for reference paisley-jvsta-7-701

Growth of cubic phase gallium nitride by modified molecular-beam epitaxy Growth of cubic phase gallium nitride

M. J. Paisley, Z. Sitar, J. B. Posthill, R. F. Davis

Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films 7(3), 701 (1989).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Growth of zinc blende-GaN on beta -SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source
  3. Epitaxial growth of cubic GaN and AlN on Si(001)
  4. Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD
  5. Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition

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