1982

• Characterization of aluminum nitride layers formed directly by 700-800 keV ¹⁵N⁺₂ implantation into aluminum

1995

• Lattice Constants, Thermal Expansion and Compressibility of Gallium Nitride
• The barrier height and interface effect of a Au-n-Gan Schottky diode

1996

• Characterization of III-V semiconductor interfaces by Z-contrast imaging, EELS and CBED

1998

• Growth and applications of Group III-nitrides

last updated Thursday, February 14, 2002 1:52:17 PM.
© 2001 The Materials Research Society