Data for reference khan-jphysd-28-1169

The barrier height and interface effect of a Au-n-Gan Schottky diode

M. R. H. Khan, T. Detchprom, P. Hacke, K. Hiramatsu, N. Sawaki

Journal of Physics D-Applied Physics 28, 1169 (1995).

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This item is cited by the following items in the database:

  1. Metal Contacts on α-GaN

Contributed by A submitted manuscript, on Monday, December 16, 1996 5:05:36 PM

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