Data for reference kido-jphysd-15-2067

Characterization of aluminum nitride layers formed directly by 700-800 keV 15N+2 implantation into aluminum

Y. Kido, M. Kakeno, K. Yamada, T. Hioki, J. Kawamoto, M. Tada

Journal of Physics D-Applied Physics 15, 2067 (1982).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review

Contributed by S. Strite

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