1960

• Optical Absorption and Recombination Radiation in Semiconductors Due to Transitions Between Hydrogen-Like Acceptor Impurity Levels and the Conduction Band

1967

• The elastic constants of cadmium sulfide between 4. 2-300^oK
• On the preparation, optical properties, and electrical behavior of aluminum nitride

1971

• Band structures of GaN and AlN

1972

• Calculation of Ternary Phase Diagrams of III-V Systems

1973

• Calculation of regular solution interaction parameters in semiconductor solid solutions
• Nonmetallic crystals with high thermal conductivity
• Electrical properties of n-type vapor-grown gallium nitride

1975

• Photoconductivity of Zn-doped GaN

1977

• Thermal conductivity of GaN: 25-360K

1985

• Band structures of semiconductors

1986

• Elastic Properties of Aluminum Nitride

1994

• Ab Initio Study of High Pressure Phase Transition in GaN

1995

• Photoluminescence in doped GaN bulk crystal
• Iii-v Nitrides: Thermodynamics and Crystal Growth at High N-2 Pressure

1997

• Dielectric Properties of Wurtzite and Zincblende Structure GaN

last updated Thursday, February 14, 2002 1:51:58 PM.
© 2001 The Materials Research Society