Data for reference teisseyre-jpcs-56-353

Photoluminescence in doped GaN bulk crystal

H. Teisseyre, P. Perlin, T. Suski, I. Grzegory, J. Jun, S. Porowski

Journal of Physics and Chemistry of Solids 56, 353 (1995).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects

Contributed by A submitted manuscript, on Sunday, June 22, 1997 3:04:14 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, May 4, 2005 12:12:16 PM.
© 1998 The Materials Research Society