Data for reference ilegems-jpcs-34-885

Electrical properties of n-type vapor-grown gallium nitride

M. Ilegems, H. C. Montgomery

Journal of Physics and Chemistry of Solids 34, 885 (1973).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Nitridation process of sapphire substrate surface and its effect on the growth of GaN
  3. Optical Detection of Electron Nuclear Double Resonance on the Residual Donor in GaN
  4. Paramagnetic defects in GaN

Contributed by S. Strite

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