Data for reference bloom-jpcs-32-2027Band structures of GaN and AlN
S. Bloom
Journal of Physics and Chemistry of Solids 32, 2027 (1971).
The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.
This item is cited by the following items in the database:
- GaN, AlN, and InN: A review
- The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
- Electronic band structures and effective-mass parameters of wurtzite GaN and InN
Contributed by S. Strite
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