Data for reference gillis-jom-48-50

The dry etching of group III-nitride wide-bandgap semiconductors

H. P. Gillis, D. A. Choutov, K. P. Martin

Journal of the Minerals, Metals and Materials Society 48, 50 (1996).

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This item is cited by the following items in the database:

  1. New plasma chemistries for etching GaN and InN: BI3 and BBr3

Contributed by A submitted manuscript, on March 3, 1998 5:19:08 PM


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