1990

• On the nature of the oxygen-related defect in aluminum nitride

1992

• Prospects for device implementation of wide band gap semiconductors

1993

• Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition
• Growth kinetics and characterizations of gallium nitride thin films by remote PECVD

1994

• Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy

1996

• Undoped and doped GaN thin films deposited on high- temperature monocrystalline AlN buffer layers on vicinal and on-axis alpha(6H)-SiC(0001) substrates via organometallic vapor phase epitaxy
• Undoped and doped GaN thin films deposited on high-tepmerature monocrystalline AlN buffer layers on vicinal and on-axis alpha-6H-SiC substrates via organometallic vapor phase epitaxy on alpha-6H-SiC(0001) via organometallic vapor phase epitaxy
• Microstructure, electrical properties, and thermal stability of Al ohmic contacts to n- GaN
• Growth defects in GaN films on sapphire: The probable origin of threading dislocations

2000

• Lattice parameters and thermal expansion of GaN

last updated Thursday, February 14, 2002 1:51:45 PM.
© 2001 The Materials Research Society