weeks-jmr-11-1081

Data for reference weeks-jmr-11-1081

Undoped and doped GaN thin films deposited on high-tepmerature monocrystalline AlN buffer layers on vicinal and on-axis alpha-6H-SiC substrates via organometallic vapor phase epitaxy on alpha-6H-SiC(0001) via organometallic vapor phase epitaxy

T.W. Weeks, M.D. Bremser, K.S. Ailey, E.P. Carlson, W.G. Perry, E.L. Piner, N.A. El-Masry, R.F. Davis

Journal of Materials Research 11(4), 1081 (1996).

Monocrystalline GaN (0001) thin films, void of oriented domain structures and associated low-angle grain boundaries, have been grown via organometallic vapor phase epitaxy on high-temperature AlN(0001) buffer layers on vicinal and on-axis alpha-6H-SiC wafers. Both n-type and p-type doping have been achieved with silicon and magnesium respectively.

This item is cited by the following items in the database:

Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates

Contributed by M. D. Bremser from gatormac3.mte.ncsu.edu. on Thursday, July 18, 1996 11:50:35 AM

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