weeks-jmr-11-1011

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Undoped and doped GaN thin films deposited on high- temperature monocrystalline AlN buffer layers on vicinal and on-axis alpha(6H)-SiC(0001) substrates via organometallic vapor phase epitaxy

T. Warren Weeks, Michael D. Bremser, K. Shawn Ailey, Eric Carlson, William G. Perry, Edwin L. Piner, Nadia A. El-Masry, Robert F. Davis

Journal of Materials Research 11(4), 1011 (1996).

Monocrystalline GaN(0001) thin films have been grown at 950 °ree; C on high-temperature, ~= (approximately-equal-to) 100 nm thick, monocrystalline AlN(0001) buffer layers predeposited at 1100 °ree; C on alpha(6H)-SiC(0001)_Si substrates via OMVPE in a cold-wall, vertical, pancake-style reactor. These films were free of low-angle grain boundaries and the associated oriented domain microstructure. The PL spectra of the GaN films deposited on both vicinal and on-axis substrates revealed strong bound excitonic emission with a FWHM value of 4 meV. The near band-edge emission from films on the vicinal substrates was shifted slightly to a lower energy, indicative of films containing residual tensile stresses. A peak attributed to free excitonic emission was also clearly observed in the on-axis spectrum. Undoped films were too resistive for accurate Hall-effect measurements. Controlled n-type, Si-doping in GaN was achieved for net carrier concentrations ranging from approximately 1(times) 10¹⁷ cm^-3 to 1(times) 10²⁰ cm^-3. Mg- doped, p-type GaN was achieved with n_A-n_D~= (approximately- equal-to) 3(times) 10¹⁷ cm^-3, rho~= (approximately-equal- to) 7 Omega(center-dot) cm and mu~= (approximately-equal-to) 3 cm²/V(center-dot) s. Double-crystal x-ray rocking curve measurements for simultaneously deposited 1.4 mum GaN films revealed FWHM values of 58 and 151 arc sec for deposition on on-axis and off-axis 6H- SiC(0001)_Si substrates, respectively. The corresponding FWHM values for the AlN buffer layers were approximately 200 and 400 arcsec, respectively. © 1996 Materials Research Society.

This item is cited by the following items in the database:

Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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