basu-jmr-9-2370

Data for reference basu-jmr-9-2370

Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy

S. N. Basu , T. Lei, T. D. Moustakas

Journal of Materials Research 9(9), 2370 (1994).

The microstructures of GaN films, grown on (001) and (111)Si substrates, by a two-step method using Electron Cyclotron Resonance assisted-Molecular Beam Epitaxy (ECR-MBE), were studied by electron microscopy techniques. Films grown on (001) Si had a predominantly zinc-blende structure. The GaN buffer layer, grown in the first deposition step, accommodated the 17% lattice mismatch between the film and substrate by a combination of misoriented domains and misfit dislocations. Beyond the buffer layer, the film consisted of highly oriented domains separated by inversion domain boundaries, with a substantial decrease in the defect density away from the interface. The majority of defects in the film were stacking faults, microtwins, and localized regions having the wurtzite structure. The structure of the GaN films grown on (111) Si was found to be primarily wurtzite, with a substantial fraction of twinned zinc-blende phase. Occasional wurtzite grains, misoriented by a 30 (degrees) twist along the [0001] axis, were also observed. A substantial diffusion of Si was seen in films grown on both substrates. (section) (diamond) 309409jmr =

This item is cited by the following items in the database:

Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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