edgar-jmr-7-235

Data for reference edgar-jmr-7-235

Prospects for device implementation of wide band gap semiconductors

J. H. Edgar

Journal of Materials Research 7(1), 235 (1992).

Diamond, silicon carbide, gallium nitride, aluminum nitride, and boron nitride are currently under development for both electronic and optoelectronic semiconductor devices. Predictions based on their physical properties indicate that devices made from these materials should be far superior to currently available devices in high power, high frequency, and short wavelength applications. Yet actual device implementation requires that adequate materials processing technology exists. In this review, the current state of the art for producing semiconductor devices from these materials is evaluated, and recommendations for areas needing further research are outlined.

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