harris-jmr-5-1763

Data for reference harris-jmr-5-1763

On the nature of the oxygen-related defect in aluminum nitride

J. H. Harris, R. A. Youngman, R. G. Teller

Journal of Materials Research 5(8), 1763 (1990).

The oxygen related defect in an aluminum nitride (AlN) single crystal and in polycrystalline ceramics is investigated utilizing photoluminescence spectroscopy, thermal conductivity measurements, x-ray diffraction lattice parameter measurements and transmission electron microscopy. The results of these measurements indicate that at oxygen concentrations near 0.75 atomic percent, a transition in the oxygen accommodating defect occurs. On both sides of this transition, simple structural models for the oxygen defect are proposed and shown to be in good agreement with the thermal conductivity and lattice parameter measurements, and to be consistent with the formation of various extended defects (e.g., inversion domain boundaries) at higher oxygen concentrations.

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.