Data for reference born-jmatsci-15-3003

The chemical preparation of gallium nitride layers at low temperatures

P. J. Born, D. S. Robertson

Journal of Materials Science 15, 3003 (1980).

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Growth of Ga-face and N-face GaN films using ZnO Substrates

Contributed by S. Strite

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