crouch-jmatsci-13-2358

Data for reference crouch-jmatsci-13-2358

Properties of GaN grown on sapphire substrates

R. K. Crouch, W. J. Debnam, A. L. Fripp

Journal of Materials Science 13, 2358 (1978).

Epitaxial growth of GaN on sapphire substrates using an open-tube growth furnace has been carried out to study the effects of substrate orientation and transfer gas upon the properties of the layers. It has been found that for the (0001) substrates, surface appearance was virtually independent of carrier gas and of doping levels. For the (1(-1)02) substrates surface faceting was greatly reduced when He was used as a transfer gas as opposed to H2. Faceting was also reduced when the GaN was doped with Zn, and the best surfaces for the (1(-1)02) substrates were obtained in a Zn-doped run using He as the transfer gas. The best sample in terms of electrical properties for the (1(-1)02) substrate had a mobility greater than 400 sq cm/V per sec and a carrier concentration of about 10 to the 17th per cu cm. This sample was undoped and used He as the transfer gas. The best (0001) sample was also grown undoped with He as the transfer gas and had a mobility of 300 sq cm/V per sec and a carrier concentration of 1 x 10 to the 18th per cu cm.

This item is cited by the following items in the database:

GaN, AlN, and InN: A review

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1978JMatS..13.2358C

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