lee-jmatchem-3-347

Data for reference lee-jmatchem-3-347

Single Phase Deposition of Alpha Gallium Nitride by a Laser Induced Transport Process

SS Lee, SM Park, PJ Chong

Journal of Materials Chemistry 3(4), 347 (1993).

Laser-assisted chemical vapour deposition (LCVD) of alpha-GaN onto sapphire (001) face is described. The bimolecular gas-phase reaction of trimethylgallium (TMG) with ammonia was employed under the influence of an ArF excimer laser (193 nm). The photolytic process permitted the single-phase deposition of GaN crystallites at lower temperatures. The stoichiometric growth was monitored by quadrupole mass analysis (QMA) and X-ray photoelectron spectroscopy (XPS), while the crystalline quality of the as-grown deposits was characterized by X-ray diffraction (XRD), reflection electron diffraction (RED), scanning electron microscopy (SEM) and luminescence measurements. The laser-induced transport process is discussed.

Contributed by E. Hellman

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.