Data for reference hvam-jlumin-12/13-611

New emission line in highly excited GaN

J. M. Hvam, E. Ejder

Journal of Luminescence 12/13, 611 (1976).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Gain Spectroscopy of HVPE-Grown GaN

Contributed by S. Strite

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