Degradation mechanisms in AlGaN/InGaN/GaN light sources

Journal of the Korean Physical Society 30(Supplement), S13 (1997).

This paper reviews the studies of device lifetime and the main degradation mechanisms in Nichia NLPB-500 blue LEDs. Following the initial investigations of rapid failures under high-current electrical pulses, where metal migration was identified as the cause of degradation, 20 LEDs were placed on a series of life tests under close to normal operating conditions. Failure analysis that was performed on the degraded devices is described and the degradation mechanisms that were identified are discussed. Also, preliminary results on high-current degradation of quantum-well LEDs are reported.

This item cites the following items in the database:

1. High-power GaN p-n junction blue-light-emitting diodes
2. Candela-class high-brightness InGaN/AlGaN double- heterostructure blue-light-emitting diodes
3. Cd-doped InGaN films grown on GaN films
4. Si-doped InGaN films grown on GaN films
5. Hole compensation mechanism of p-type GaN films
6. High-Quality InGaN Films Grown on GaN Films
7. Thermal Annealing Effects on P-Type Mg-Doped GaN Films
8. Highly p-typed Mg-doped GaN films grown with GaN buffer layer
9. GaN Growth Using GaN Buffer Layer
10. Degradation of blue AlGaN/InGaN/GaN LEDs subjected to high current pulses
11. Analysis of deep levels in n-type GaN by transient capacitance methods
12. Deep level defects in n-type GaN
13. Structural defects in GaN epilayers grown by gas source molecular beam epitaxy

This item is cited by the following items in the database:

1. Effects of proton irradiation on AlGaN/InGaN/GaN green light emitting diodes
2. Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents

Contributed by M. Osinski from sakai24.svbl.tokushima-u.ac.jp. on November 17, 1997 9:55:03 PM

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