1974

• Temperature dependence of photoluminescence from GaN
• Anomalous behaviour in GaN-Zn junctions
• Pair luminescence from Zn-doped GaN

1976

• Epitaxial growth of undoped and Mg-doped GaN

1979

• Photoluminescence in P-doped GaN

1980

• Mechanism of yellow luminescence in GaN
• High-frequency and low-dispersion characteristics of surface acoustic waves on AlN/Al₂O₃

1981

• Epitaxial growth of aluminum nitride on sapphire using metalorganic chemical vapor deposition
• Low temperature growth of gallium nitride

1982

• Unstable regions in III-V quaternary solid solutions composition plane calculated with strictly regular solution approximation
• Film growth of GaN on a c-axis oriented ZnO film using reactive ionized-cluster beam technique and its application to thin film devices

1983

• Effects of lattice mismatch on the solidus compositions of Ga_xIn_1-xP liquid phase epitaxial growth

1985

• Epitaxial growth of GaN _1-xP _x (x ≤ 0.04) on sapphire substrates

1986

• Low temperature growth of GaN and AlN on GaAs using metalorganics and hydrazine

1987

• Growth characterization of low-temperature MOCVD GaN--Comparison between N₂H₄ and NH₃

1988

• Effect of AlN buffer layer on AlGaN/α-Al₂O₃ heteroepitaxial growth by metalorganic vapor phase epitaxy
• Heteroepitaxial growth of GaN _1-xP _x (x≤0.06) on sapphire substrates
• Interfacial superstructure of AlN/n-GaAs(001) system fabricated by metalorganic chemical vapor deposition
• Heteroepitaxial growth and the effects of strain on the luminescent properties of GaN films on (11&twobar;0) and (0001) sapphire substrates
• Improvement of the electrical properties of the AlN/GaAs MIS system and their thermal stability by GaAs surface stochiometry control

1989

• P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
• Effects of In- surface treatment on the electrical properties and structures of AlN/n-In- interface
• Properties of Ga _1-xIn _xN films prepared by MOVPE
• Growth of InN on GaAs substrates by the reactive evaporation method
• p-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation

1990

• Stimulated emission near ultraviolet at room temperature from a GaN film grown on sapphire by MOVPE using an AlN buffer layer
• Thermal stability of the AlN/a-Si/GaAs MIS diodes with different GaAs surface stochiometry
• Control of the electrical properties of AlN/thin-a-Si/GaAs MIS diodes by GaAs surface pretreatments

1991

• Cathodoluminescence properties of undoped and Zn-doped Al_xGa_1-xN grown by metalorganic vapor phase epitaxy
• In situ monitoring of GaN growth using interference effects
• Preparation of AlN-Al₂O₃ composite films by microwave plasma chemical vapor deposition
• Metalorganic vapor phase epitaxial growth and properties of GaN/Al _0.1Ga_0.9N layered structures
• Structure control of GaN films grown on (001) GaAs substrates by GaAs surface pretreatments
• High-power GaN p-n junction blue-light-emitting diodes
• Highly p-typed Mg-doped GaN films grown with GaN buffer layer
• GaN Growth Using GaN Buffer Layer
• Defect Filtering in GaAs on Si by Conformal Growth

1992

• Hole compensation mechanism of p-type GaN films
• Si- and Ge doped GaN films grown with GaN buffers layers
• Heteroepitaxial Growth of GaN1-XPx (x Less Than or Equal to 0.09) on Sapphire Substrates
• Thermal Annealing Effects on P-Type Mg-Doped GaN Films
• High-Quality InGaN Films Grown on GaN Films
• Relaxation Process of the Thermal Strain in the GaN/Al₂O₃ Heterostructure and Determination of the Intrinstic Lattice Constants of GaN Free from the Strain
• Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

1993

• Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor PHASE Epitaxy
• Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
• Growth of Single Crystal AlxGa1-XN Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
• Room-Temperature Low-Threshold Surface-Stimulated Emission by Optical Pumping from AlGaN/GaN Double Heterostructure
• Si-doped InGaN films grown on GaN films
• Cd-doped InGaN films grown on GaN films

1994

• High-resolution electron microscopy of extended defects in wurtzite crystals
• Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
• Transmission electron microscope observation of cubic GaN grown by metalorganic vapor phase epitaxy with dimethylhydrazine on (001) GaAs
• Temperature Dependence of Band Gap Change in InN and AlN
• Formation of Cubic GaN on (111)b GaAs by Metal Organic Vapor- phase Epitaxy with Dimethylhydrazine
• InN thin film growth using N₂, NH₃ and N₂-He rf plasma
• ZnCdSe/ZnSe quantum-well laser-diode on a (711)A GaAs substrate
• Characterization of the shallow and deep levels in Si doped GaN grown by metal-organic vapor phase epitaxy
• Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF Radical Nitrogen Source
• Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
• H Atom Incorporation in Mg Doped GaN Grown by Metalorganic Chemical Vapor Deposition
• Gas-Source Molecular Beam Epitaxy of GaN_xAs_1-x Using a N Radical as the N Source
• GaN Core Relaxation Effects and Their Ramifications for P-Type Doping

1995

• fabrication of GaN hexagonal pyramids on dot-patterned GaN/Sapphire substrates via selective metalorganic vapor phase epitaxy
• Stimulated-Emission by Current Injection from an AlGaN/GaN/GaInN quantum-well device
• Threshold Estimation of GaN-Based Surface Emitting Lasers Operating in Ultraviolet Spectral Region
• Raman scattering of Se-doped gallium Nitride films
• Schottky Barrier on n-Type Al_0.14Ga_0.86N Grown by Oganometallic Vapor Phase Epitaxy
• High-Brightness InGaNBlue,Green and Yellow Light-Emitting Diodes with Quantum Well Structures
• Superbright Green InGaN Single-Quantum-Well-Structure Light-Enmitting Diodes
• Effect of Biaxial Strain on Cubic and Hexagonal GaN Analyzed by Tight-Binding Method
• Determination of the Conduction Band Electron Effective Mass inHexagonal GaN
• GaN/GaInN/GaN Double Heterostructure Light Emitting Diode Fabricated Using Plasma-Assisted Molecular Beam Epitaxy
• The strain Energy Densities of Hexagonal and Tetragonal Epitaxial Media
• Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy
• New Epitaxial Growth Method of Cubic GaN on (100)GaAs Using (ch3)(3)ga, HCl and Nh3
• Transmission Electron Microscopic Observation of AlN/Alpha Al2o3 Heteroepitaxial Interface with Initial Nitriding Ain Layer
• High-Brightness InGaN Blue,Green and Yellow Light-Emitting Diodes with Quantum Well Structures

1996

• Model for lasing Oscillation due to Bi-Excitons and Localized Biexcitons in Wide-Gap Semiconductor Quantum Wells
• GaInNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance
• Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well Lasers
• Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
• Growth and characterization of thick GaN by sublimation method and homoepitaxial growth by metalorganic chemical vapor deposition
• Tight-Binding Analysis of the Optical Matrix Element in Wurtzite- and Zincblende-GaN Quantum Wells
• Photoluminescence Properties of GaN Grown under Ion Flux Reduced Condition by Plasma Enhanced Molecular Beam Epitaxy
• On the Theory of Optical Gain of Strained-Layer Hexagonal and Cubic GaN Quantum-Well Lasers
• Si-Doping in GaN Grown by Metal-Organic Vapor Phase Epitaxy Using Tetraethylsilane
• Synthesis of AlN Thin Films on Sapphire Substrates by Chemical Vapor Deposition of AlCl3-NH3 System and Surface Acoustic Wave Properties
• Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate
• Crystal Orientation Effect on Valence-Subband Structures in Wurtzite-GaN Strained Quantum Wells
• Surface Morphology Study for Hexagonal GaN Grown on GaAs(100)
• Coloring and Bleaching Reactions of Photonic Molecules by using a Single GaN-based Light Emitting Diode
• Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• Theoretical Study of the Surface Reaction Mechanism of GaN with HCl
• InGaN MQW Structure Laser Diodes with Cleaved Mirror Facets
• Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire
• High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2x2) and (4x4) Reflection High Energy Electron Diffraction Patterns
• Electrical Transport Properties of p-GaN
• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
• Biexciton luminescence from GaN epitaxial layers
• Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
• First-Principles Calculations on Mg Impurity and Mg-H Complex in GaN
• Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method
• Reduction of Threshold Current Density of Wurtzite GaN/AlGaN Quantum Well Lasers by Uniaxial Strain in (0001) Plane
• Growth of InN by chloride-transport VPE
• Room Temperature pulsed operation of nitride based MQW laser diodes with cleaved facets on conventional c-face sapphire substrates
• TEM of sublimation grown GaN single crystal and GaN homoepitaxial films

1997

• Morphologyabd X-ray Diffraction Peak Widths of Aluminum Nitride Single CrystalsPrepared by the Sublimation Method
• Raman and Electrical Characterizations of a-GaAs_1-xN_x Thin Films Grown on c-Si(p) Substrates by N₂ Reactive Sputtering
• Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate
• Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
• Room-Temperature operation of GaInNAs/GaInP DH Laser Diodes grown by MOCVD
• Experimental Surface Acoustic Wave Properties of AlN Thin Films on Sapphire Substrates
• MOVPE of Thick InGaN on Sapphire Substrate
• Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy
• Quantum-confined Stark effect due to piezoelectric fields in GaInN strained quantum wells
• Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
• Hydride Vapor Phase Epitaxy of In_xGa_1-xN Thin Films
• Modeling of a pulsed-power SF₆ plasma
• Effect of Plasma Parameter Control on the Growth of Zincblende Type GaN Films by ECR Plasma Enhanced Metalorganic Chemical Vapor Deposition
• Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
• Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation
• Atomic Scale Indium Distribution in a GaN/In0. 43GaN0. 57N/Al0. 1Ga0. 9N Quantum Well Structure
• Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
• Cubic Dominant GaN Growth on (001) GaAs Substrates by Hydride Vapor Phase
• LiGaO₂ Single Crystals for a Substrate of Hexagonal GaN Thin Films
• Optical Properties of Strained AlGaN and GaInN on GaN
• Materials Design for the Fabrication of Low-Resistivity p-Type GaN Using a Codoping Method
• Nucleation Control in the Growth of Bulk GaN by Sublimation Method
• Morphology and X-Ray Diffraction Peak Widths of Aluminum Nitride Single Crystals Prepared by the Sublimation Method
• Theoretical Investigations of Thermodynamic Stability of III-III-N
• Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µm Intersubband Transition in AlGaN/GaN Quantum Wells
• InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
• Growth of GaN on GaAs(111)B by Metalorganic Hydrogen Chloride VPE Using Double Buffer Layer
• Thermodynamic Study on Metalorganic Vapor-Phase Epitaxial Growth of Group III Nitrides
• High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
• Growth of Ga_1-xB_xN by Molecular Beam Epitaxy
• High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH₃ on Surface Cracking
• Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy
• InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-LayerSuperlattices
• Bandgap energy of GaNAs alloys grown on (001) GaAs by metalorganic molecular beam epitaxy
• Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
• Growth of GaN and Al_0.2Ga_0.8N on Patterened Substrates via Organometallic Vapor Phase Epitaxy
• Epitaxial Growth of InN by Plasma-assisted MOCVD
• Crystalline Structure changes in GaN Films Grown at Different Temperatures
• VPE of In_xGa_1-xN using InCl₃, GaCl₃ and NH₃ sources
• GSMBE growth of GaN on c-, a-, r- and m-plane sapphire and silica glass substrates
• Growth of InN at High Temperature by HVPE
• GaN Thin Film Growth on LiGaO₂ Substrate with a Multi-Domain Structure
• Thermodynamic Analysis on Molecular Beam Epitaxy of GaN, InN and AlN
• Theoretical Analysis of the Threshold Current Density in GaN/AlGaN Strained QW Lasers with a Modulation-doped Structure
• Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
• Effects of Dissolved Oxygen on Anodic Etching of n-Type GaN Films Using a Sodium Hydroxide Electrolyte
• Feasibility study on ultrafast non-linear optical properties of 1.55 micron intersubband transition in AlGaN/GaN QWs
• Polarized reflectance spectroscopy and spectroscopic ellipsometry determination of the optical anisotropy of GaN on sapphire

1998

• Current and temperature dependence of electroluminescence of InGaN-based UV/blue/green light-emitting diodes
• Ohmic Contact to P-Type GaN
• Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition
• Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate
• Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
• Growth of GaN on Indium Tin Oxide/Glass Substrates by RF Plasma-Enhanced Chemical Vapor Deposition Method
• High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
• Evolution of Surface Morphology and Strain in Low-Temperature AlN Grown by Plasma-Assisted Molecular Beam Epitaxy
• Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
• Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
• Spiral Growth of InGaN Nanoscale Islands on GaN
• Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates
• Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures
• Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature
• Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
• Increased Size of Open Hexagonally Shaped Pits due to Growth Interruption and Its Influence
• Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
• InGaN-based blue light-emitting diodes grown on epitaxially laterally overgrown GaN substrates
• Violet InGaN/GaN light emitting diodes grown by molecular beam epitaxy using NH₃

1999

• Metalorganic vapor phase epitaxial growth of GaNAs using tertiarybutylarsine (TBA) anddimethylhydrazine (DMHy)
• Quality improvement of GaInNAs/GaAs quantum well growth by metalorganic chemical vapor deposition using tertiarybutylarsine
• Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
• Analysis of band offset in GaNAs/GaAs by X-ray photoelectron spectroscopy
• Molecular beam epitaxy of GaN under N-rich conditions using NH₃
• Piezoelectric Stark-like ladder in GaN/GaInN/GaN heterostructures
• A 1. 3- mu m GaInNAs laser diode with a lifetime of over 1000 hours
• Large Free-Standing GaN Substrates by Hydride Phase Epitaxy and Laser-Induced Liftoff.
• Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50 Degrees C with a Fundamental Transverse Mode,

2000

• Raman Scattering Studies on Single-crystalline BulkAlN under High Pressures
• Temperature Dependenceof the Phonons of Bulk AlN
• High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy
• High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy
• Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy
• High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates

last updated Thursday, February 14, 2002 1:51:22 PM.
© 2001 The Materials Research Society