Data for reference sugihara-jjap-39-l197

High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy

D. Sugihara, A. Kikuchi, K. Kusakabe, S. Nakamura, Y. Toyoura, T. Yamada, K. Kishino

Japanese Journal of Applied Physics 39(3A/B), L197 (2000).

The authors report the highest room temperature mobility of GaN grown by rf-molecular beam epitaxy.

This item is cited by the following items in the database:

  1. Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers

Contributed by A submitted manuscript, on Tuesday, October 17, 2000 4:01:07 PM

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